| No | Part number | Description ( Function ) | Manufacturers | |
| 2377 | 2SA0683 | Silicon PNP epitaxial planar type Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V U |
 Panasonic Semiconductor |
|
| 2376 | 2SA0684 | Silicon PNP epitaxial planar type Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V U |
Panasonic Semiconductor |
|
| 2375 | 2SA0879 | Silicon PNP epitaxial planar type Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage |
Panasonic Semiconductor |
|
| 2374 | 2SA0885 | Silicon PNP epitaxial planar type Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9± |
Panasonic Semiconductor |
|
| 2373 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak col |
Panasonic Semiconductor |
|
| 2372 | 2SA100 | (2SA100 - 2SA104) Ge PNP Drift
|
 ETC |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||