No | Part number | Description ( Function ) | Manufacturers | |
1 | 2PG011 | Silicon N-Channel Enhancement IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.) Package Code TO-220D-A1 Pin Name 1. Gate 2. Collector 3. Emitter C |
Panasonic |
0  1  2  3  4  5  6  7  8 9 |
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2PG001 | N-channel enhancement mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High speed hall time: tf = |
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2PG002 | N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = |
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2PG006 | Silicon N-channel enhancement IGBT IGBT This product complies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMc |
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List of most widely used semiconductors
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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