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Datasheet 2PG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2PG001 | N-channel enhancement mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High speed hall time: tf = 250 nsec(typ.)
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 Panasonic |
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| 6 | 2PG002 | N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.)
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Panasonic |
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| 5 | 2PG006 | Silicon N-channel enhancement IGBT IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnua |
Panasonic |
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| 4 | 2PG009 | Silicon N-Channel Enhancement IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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Panasonic |
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