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2N7002KW PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
5 2N7002KW
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications.  FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

Unisonic Technologies
Unisonic Technologies
pdf
4 2N7002KW
N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS  9 N-Channel MOSFET RDS(on)MAX ȍ#9 ȍ#9 ID P$ SOT-323 3 1. GATE 2. SOURCE 1 3. DRAIN 2 FEATURE z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD prot

JCET
JCET
pdf
3 2N7002KW
N-Channel Enhancement Mode Field Effect Transistor

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 an

Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 2N7002KW
N-Ch Small Signal MOSFET

Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), VGS@4.5V, IDS@200mA=4  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Very Low Leak

SeCoS
SeCoS
pdf
1 2N7002KW
60V N-Channel Enhancement Mode MOSFET

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Dis

Pan Jit International
Pan Jit International
pdf


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