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2N7002DW PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
7 2N7002DW
Small-Signal-Transistor

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3W 4 0.3 A PG-SOT363 65 4 1 2 3 Type Package Tap

Infineon Technologies
Infineon Technologies
pdf
6 2N7002DW
N-Channel Enhancement Mode Field Effect Transistor

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-

Fairchild Semiconductor
Fairchild Semiconductor
pdf
5 2N7002DW
DUAL N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Si

Unisonic Technologies
Unisonic Technologies
pdf
4 2N7002DW
Dual N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability ID 115mA SOT-363 6 5 4  1 2 3 APPLICATION z Load

JCET
JCET
pdf
3 2N7002DW
Dual N-Channel MOSFET

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208

Weitron Technology
Weitron Technology
pdf
2 2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management appl

Diodes Incorporated
Diodes Incorporated
pdf


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