No | Part number | Description ( Function ) | Manufacturers | |
124 | 2N7002 | 0.20A, 60V, N-Channel MOSFET 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package RDS(on) Id 0.35 A 0.20 A 3 2 1 VDSS 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE APPLICATIONS Q HIGH SWITCHING APPLICATIONS Figure 2: Internal Schemati |
ST Microelectronics |
|
123 | 2N7002 | 60V, 180mA, N-channel Vertical D-MOS Transistor DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhance |
Philips |
|
122 | 2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. FEATURES • High density cell design for low RDS(ON). • Voltage controlled small |
Pan Jit International Inc. |
|
121 | 2N7002 | N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mo |
NXP Semiconductors |
|
120 | 2N7002 | N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain Applications ►►Motor controls ►► Converters � |
Supertex Inc |
|
119 | 2N7002 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO 2N7002 S D PARTMARKING DETAIL – 702 G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P |
Zetex Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |