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2N7002 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
124 2N7002
N-channel vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhance

Philips
Philips
pdf
123 2N7002
N-channel Trench MOSFET

DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mo

NXP
NXP
pdf
122 2N7002
N-CHANNEL TRANSISTOR

N-CHANNEL TRANSISTOR COMCHIP www.comchiptech.com 2N7002 Description The MTN7002N 2 is a N-channel enhancement-mode MOS transistor. .119 (3.0) .110 (2.8) SOT-23 .020 (0.5) Equivalent Circuit Top View .056 (1.40) .047 (1.20) 3 1 2 .006 (0.15)max. .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) GΚGate SΚSourse DΚDrain .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Di

Comchip Technology
Comchip Technology
pdf
121 2N7002
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002 0.3A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switc

Unisonic Technologies
Unisonic Technologies
pdf
120 2N7002
N-channel MOSFET

2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Pb-free; RoHS-compliant MARKING: 7002 MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol VDS ID PD TJ Tstg Parameter Drain-Source voltage Drain C

Silicon Standard
Silicon Standard
pdf
119 2N7002
N-CHANNEL MOSFET

2N7002 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流,内置静电保护二极管. Sensitive gate trigger current and Low Holding current.ESD protected diode. 用途 / Applications 用作一般的开关和

BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
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