No | Part number | Description ( Function ) | Manufacturers | |
4 | 2N6296 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6294 2N6295 NPN 2N6296 2N6297 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications. MARKING: FUL |
Central Semiconductor Corp |
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3 | 2N6296 | Bipolar PNP Device 2N6296 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar PNP Device. VCEO = 60V IC = 4A All Semelab hermetically sealed products c |
Seme LAB |
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2 | 2N6296 | (2N6296 / 2N6297) Silicon Power Transistors SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION |
SavantIC |
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1 | 2N6296 | Trans Darlington PNP 60V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |