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Datasheet 2N6251 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N6251 | NPN Darlington Power Silicon Transistor 2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Volta |  MA-COM | transistor |
| 2 | 2N6251 | NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices
2N6249 2N6250
2N6251
TECHNICAL DATA
Qualified Level JAN
JANTX JANTXV JANHC
MAXIMUM RATINGS
Ratings
Symbol 2N6249 2N6250 2N6251
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Cur |  Microsemi | transistor |
| 3 | 2N6251 | Bipolar NPN Device 2N6251
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 |  Seme LAB | data |
| 4 | 2N6251 | NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
Central
TM
Semiconductor Corp.
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
|  Central Semiconductor Corp | transistor |
| 5 | 2N6251 | High Voltage NPN Silicon Power Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6251/D
High Voltage NPN Silicon Power Transistors
. . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applica |  Motorola Semiconductors | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte  Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | |
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