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Datasheet 2N6235 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N6235 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6235
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min) ·DC Current Gain-
: hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for ro |
 Inchange Semiconductor |
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| 3 | 2N6235 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 2N6235
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
B |
 Seme LAB |
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| 2 | 2N6235 | 4 AMPERE POWER TRANSISTOR PNP SILICON |
 Motorola Inc |
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| 1 | 2N6235 | Trans GP BJT NPN 325V 5A 3-Pin(2+Tab) TO-66 |
 New Jersey Semiconductor |
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