| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power |
 Unisonic Technologies |
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Search Result Starting with '2N60' |
| Part No | Description ( Function) | Manufacturers | |
| 2N6055 | (2N6055 / 2N6056) Silicon Power Transistor SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swi |
 SavantIC |
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| 2N6050 | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable |
 Inchange Semiconductor |
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| 2N6082 | VHF Communications Transistor |
 ST Microelectronics |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||