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2N60-E PDF Datasheet Search Results

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No Part number Description ( Function ) Manufacturers PDF
1 2N60-E

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

Unisonic Technologies
Unisonic Technologies

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Search Result Starting with '2N60'

Part No Description ( Function) Manufacturers PDF
2N6055   (2N6055 / 2N6056) Silicon Power Transistor

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swi

datasheet pdf
2N6050   Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf
2N6082   VHF Communications Transistor

ST Microelectronics
ST Microelectronics
datasheet pdf

List of most widely used semiconductors

Part Number Function Manufacturers PDF

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
 6N137   |  LM393   |  2N3906    |  2N2222   |  TIP120    |  1N5818   |  LM324N    |  A1015   |  SMAJ20CA  

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