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Datasheet 2N5458 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N5458 | JFET GENERAL PURPOSE 2N5457 2N5458 2N5459
CASE 29-05, STYLE 5
TO-92 (TO-226AA) JFET
GENERAL PURPOSE
—N-CHANNEL DEPLETION
Refer to 2N4220 for graphs.
MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current
@Total Device Dissipation Tj\ = 25°C
Derate above 25°C Junctio | Motorola Semiconductors | data |
2 | 2N5458 | Diode, Rectifier | American Microsemiconductor | diode |
3 | 2N5458 | N-Channel General Purpose Amplifier 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal Technologies
2N5457 2N5458 2N5459
MMBF5457 MMBF5458 MMBF5459
G
D G S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
S
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors | Fairchild Semiconductor | amplifier |
4 | 2N5458 | N-Channel JFET General Purpose Amplifier/Switch N-Channel JFET General Purpose Amplifier/Switch
CORPORATION
2N5457 – 2N5459
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . | Calogic LLC | amplifier |
5 | 2N5458 | N-Channel JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel
Operati | Taitron Components | data |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32 SSDI transistor | | |
4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown Semicoa Semiconductor data | | |
7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T Microsemi Corporation transistor | |
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Número de pieza | Descripción | Fabricantes | |
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