Datasheet 2N5415 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N5415	PNP Transistor MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate abo	Motorola Semiconductors	transistor
2	2N5415	Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and consumer equipment a	Inchange Semiconductor	transistor
3	2N5415	SILICON PNP TRANSISTORS 2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collect	Central Semiconductor	transistor
4	2N5415	PNP Silicon Low-Power Transistor 2N5415 – 2N5416 Compliant PNP Silicon Low-Power Transistor Qualified per MIL-PRF-19500/485 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These	Microsemi	transistor
5	2N5415	PNP high-voltage transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product speciﬁcation PNP high-voltage transistors FEATURES	NXP Semiconductors	transistor

2N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N5000	NPN Silicon Power Transistor	Texas	transistor
2	2N5000	Trans GP BJT NPN 80V 2A 3-Pin TO-59	New Jersey Semiconductor	data
3	2N5001	PNP Transistor 2 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N3205 2 40 20 60 Note 1 0.4 Note 1 Note 1 40 TO-59 2N32	SSDI	transistor
4	2N5001	Trans GP BJT PNP 80V 2A 3-Pin TO-59	New Jersey Semiconductor	data
5	2N5002	HIGH SPEED NPN TRANSISTOR	SSDI	transistor
6	2N5002	Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002 Type 2N5002 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown	Semicoa Semiconductor	data
7	2N5002	(2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC IC(3) PT T	Microsemi Corporation	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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