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Datasheet 2N5401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 27 | 2N5401 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5401 TO-92 CBE
EBC
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise sp |
 CDIL |
 |
| 26 | 2N5401 | PNP Silicon Amplifier Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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)HDWXUHV
• Through Hole Package • 150oC Junction Temperature • Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See or |
 MCC |
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| 25 | 2N5401 | PNP Transistors PNP Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol VCEO VCBO VEBO
IC PD
Tj
Tstg
2N5401
TO-92
1. EMITTER 2. BASE 3. CO |
 WEITRON |
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| 24 | 2N5401 | PNP Plastic Encapsulated Transistor Elektronische Bauelemente
2N5401
-0.6 A, -160 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V)
Colle |
 SeCoS |
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