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Datasheet 2N5089 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N5089 | NPN Epitaxial Silicon Transistors SMALL SIGNAL GENERAL PURPOSE TRANSISTORS
2N5089
NPN Epitaxial Silicon Transistors
Features
• Application for Amplifier Circuit, Switching Circuit, Inverter • RoHS Compliant
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
V CEO
Collector-Base Voltage
V CBO
Colle |  TAITRON | transistor |
| 2 | 2N5089 | AMPLIFIER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
NPN Silicon
2N5088 2N5089
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N5088 2N5089
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissip |  Motorola Semiconductors | transistor |
| 3 | 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTORS
2N5088 2N5089 TO-92 CBE
EBC
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N5088
Collector -Base Voltage
VCBO
35
Collector -Emitter Voltage
VCE0 |  CDIL | transistor |
| 4 | 2N5089 | NPN EPITAXIAL SILICON TRANSISTOR |  Samsung semiconductor | transistor |
| 5 | 2N5089 | NPN General Purpose Amplifier 2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal Technologies
2N5088 2N5089
MMBT5088 MMBT5089
C
E C B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from |  Fairchild Semiconductor | amplifier |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
| 2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32  SSDI transistor | | |
| 4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
| 6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown  Semicoa Semiconductor data | | |
| 7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T  Microsemi Corporation transistor | |
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