| No | Part number | Description ( Function ) | Manufacturers | |
| 4 | 2N5031 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTIO |
 Microsemi Corporation |
|
| 3 | 2N5031 | HIGH FREQUENCY TRANSISTOR 2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO •c PD TJ< Tstg Value 10 15 3.0 |
 Motorola Semiconductors |
|
| 2 | 2N5031 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTIO |
 Advanced Power Technology |
|
| 1 | 2N5031 | Trans GP BJT NPN 10V 0.02A 4-Pin TO-72 |
 New Jersey Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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