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2N3866 PDF Datasheet

The 2N3866 is High Frequency Transistor, SilICon NPN Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
16 2N3866
Silicon planar epitaxial overlay transistors

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistors DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector co

NXP Semiconductors
NXP Semiconductors
pdf
15 2N3866
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product • 1. Em

Microsemi Corporation
Microsemi Corporation
pdf
14 2N3866
Chip Type 2C3866A Geometry 1007 Polarity NPN

Data Sheet No. 2C3866A Chip Type 2C3866A Geometry 1007 Polarity NPN Generic Packaged Parts: 2N3866, 2N3866A Chip type 2C3866A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3866A, 2N3866, 2N3866AUB, SD3866A, SD3866AF, SQ3866A, SQ3866AF Product Summary: APPLICATIONS: Designed for amplifier, frequency multiplier and oscillator applica

Semicoa Semiconductor
Semicoa Semiconductor
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13 2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR

2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO

Advanced Semiconductor
Advanced Semiconductor
pdf
12 2N3866
HIGH FREQUENCY TRANSISTOR

2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1

Motorola Semiconductors
Motorola Semiconductors
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11 2N3866
Silicon NPN Power Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN Planar Epitaxial Overlay Transistor 2N3866 DESCRIPTION ·This type is primarily intended for class-A, B or C amplifiers, Frequency multiplier and oscillator circuits. ·High Gain Bandwidth Product fT= 500 MHz (Min.) ·Low Collector Capacitance; CC = 3 pF Max. APPLICATIONS ·Designed for use in output, drive

Inchange Semiconductor
Inchange Semiconductor
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