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Datasheet 2N3011 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N3011 | Bipolar NPN Device 2N3011
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
1 – Emitter
TO18 (TO206AA) PINOUTS
2 – Base
3 – Collector
Bipolar NPN Device.
VCE |
 Seme LAB |
 |
| 2 | 2N3011 | SWITCHING TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltaged)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Peak (10 /us Pulse) Total Device Dissipation (»T/ = 25°C
Derate above 25°C Total Device Dissipation (d Jq = 25°C
TC = 100°C Derate above 25°C |
 Motorola Semiconductors |
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| 1 | 2N3011 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV
hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns)
MIN MAX
MAX
MAX MIN MAX MAX
toff (ns)
MAX
2N2896 NPN AMPL/S |
 Central Semiconductor |
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