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2N2219A PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
22 2N2219A
Type 2N2219A Geometry 0400 Polarity NPN

Data Sheet No. 2N2219A Type 2N2219A Geometry 0400 Polarity NPN Qual Level: JAN - JANS Features: • General-purpose transistor for switching and amplifier applicatons. Housed in TO-39 case. Also available in chip form using the 0400 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/251 which Semicoa meets in all cases. The Typ values are actual batch averages f

Semicoa
Semicoa
pdf
21 2N2219A
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box

New Jersey Semiconductor
New Jersey Semiconductor
pdf
20 2N2219A
Small Signal Switching Transistor

2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/251 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 50 Collector −Base Voltage VCBO 75 Emitter −Base Voltage VEBO 6.0 Collector Current − Cont

ON Semiconductor
ON Semiconductor
pdf
19 2N2219A
SMALL SIGNAL BIPOLAR NPN SILICON

MCC Features • • • • • Meets MIL 19500 /251 Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5           !"# $ %    !"# 2N2219A  SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Co

Micro Commercial Components
Micro Commercial Components
pdf
18 2N2219A
SILICON NPN TRANSISTORS

2N2219 2N2219A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL

Central Semiconductor
Central Semiconductor
pdf
17 2N2219A
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Volta

Inchange Semiconductor
Inchange Semiconductor
pdf


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