No | Part number | Description ( Function ) | Manufacturers | |
2 | 2MBI200U2A-060 | IGBT module SPECIFICATION Device Name Type Name Spec. No. : : : IGBT module 2MBI200U2A-060 MS5F5616 Oct. 30 ’03 Oct. 30 ’03 S.Ogawa S.Miyashita Y.Seki K.Yamada MS5F 5616 1 13 a H04-004-07b R e v i s e d Date Classification Ind. Content R e c o r d s Applied date Issued date Drawn Checked Checked Approved Oct.-30 -’03 Enactment Revised VCE(sat), VF |
Fuji Electric |
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1 | 2MBI200U2A-060-50 | Power Devices (IGBT) 6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv/dt, excellent turn-on dic/dt |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |