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2M140Z PDF Datasheet

The 2M140Z is Glass Passivated Junction SilICon Zener Diodes. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2M140Z
Glass Passivated Junction Silicon Zener Diodes

2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound, UL flam

Taiwan Semiconductor
Taiwan Semiconductor
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FU-68SDF-V802M140B   1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION)

MITSUBISHI (OPTICAL DEVICES) TENTATIVE FU-68SDF-V802MxxxB 1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) DESCRIPTION Module type FU-68SDF-V802MxxB is a 1.58µm (L-Band) DFB-LD module with single

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2M14Z   Glass Passivated Junction Silicon Zener Diodes

2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco

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2SA2140   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM

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2SA2140   Silicon PNP Epitaxial Transistor

Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.0±0.5 For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package wh

Panasonic Semiconductor
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2SA2140   Silicon PNP Power Transistor

C/ 'J , Unc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE 1 ppf i 2 <

New Jersey Semi-Conductor
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[1]    

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