No | Part number | Description ( Function ) | Manufacturers | |
1 | 2M140Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound, UL flam |
Taiwan Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2M140Z |
Part No | Description ( Function) | Manufacturers | |
FU-68SDF-V802M140B | 1.58 um (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) MITSUBISHI (OPTICAL DEVICES) TENTATIVE FU-68SDF-V802MxxxB 1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION) DESCRIPTION Module type FU-68SDF-V802MxxB is a 1.58µm (L-Band) DFB-LD module with single |
Mitsubishi Electric Semiconductor |
|
2M14Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z Taiwan Semiconductor CREAT BY ART 2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes FEATURES - Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acco |
Taiwan Semiconductor |
|
2SA2140 | Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM |
Inchange Semiconductor |
|
2SA2140 | Silicon PNP Epitaxial Transistor Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.0±0.5 For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package wh |
Panasonic Semiconductor |
|
2SA2140 | Silicon PNP Power Transistor C/ 'J , Unc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE 1 ppf i 2 < |
New Jersey Semi-Conductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |