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28F256J3 PDF Datasheet

The 28F256J3 is (28fxxxj3) Strata Flash Memory. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 28F256J3
(28FxxxJ3) Strata Flash Memory

Intel StrataFlash® Memory (J3) 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buff

Intel
Intel
pdf

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Recommended search results related to 28F256J3

Part No Description ( Function) Manufacturers PDF
JS28F256J3A   Intel StrataFlash Memory (J3)

( DataSheet : ) Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Read

Intel Corporation
Intel Corporation
datasheet pdf
TE28F256J3C   (TE28FxxxJ3C) Strata Flash Memory

Intel Corporation
Intel Corporation
datasheet pdf
28F256   256K(32K x8 / Chip Erase)FLASH MEMORY

STMicroelectronics
STMicroelectronics
datasheet pdf
28F256   256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory

FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention

Advanced Micro Devices
Advanced Micro Devices
datasheet pdf
28F256   256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory with Embedded Algorithms

FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention

Advanced Micro Devices
Advanced Micro Devices
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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