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Datasheet 28C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 30 | 28C010T | 1 Megabit (128K x 8-Bit) EEPROM 28C010T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
A6
X Decoder
Memory Array
Memory
Logic Diagram
FEATUR |
 Maxwell Technologies |
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| 29 | 28C011T | 1 Megabit (128K x 8-Bit) EEPROM 1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
28C011T
A7 A16
X Decoder
Memory Array
Data Latch
Memory
Logic Diagram
FEATURES:
• 128k x 8-bi |
 ETC |
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| 28 | 28C011T | 1 Megabit (128K x 8-Bit) EEPROM 28C011T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
28C011T
Y Decoder Address Buffer and Latch
Y Gating
A6
A7 A16
X Decoder
Memory Array
Data Latch
Memory
Logic Di |
Maxwell Technologies |
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| 27 | 28C04A | 4K (512 x 8) CMOS EEPROM 28C04A
4K (512 x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/Write Cycles - Automatic Write Operati |
 Microchip Technology |
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