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20N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
9 20N60
600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high ene

UTC
UTC
pdf
8 20N60A4D
HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

Fairchild Semiconductor
Fairchild Semiconductor
pdf
7 20N60B
Hiperfast(tm) Igbt

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-220) TO-220 TO-263 M3 M3.5 Test Conditions TJ = 25°C to 150°C TJ = 25°C to

IXYS Corporation
IXYS Corporation
pdf
6 20N60BD1
Hiperfast(tm) Igbt

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22

IXYS Corporation
IXYS Corporation
pdf
5 20N60C2
SPP20N60C2

Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.19 20 avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra l

Infineon Technologies
Infineon Technologies
pdf
4 20N60C3
HGTG20N60C3

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-sta

Intersil Corporation
Intersil Corporation
pdf


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