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20N03L PDF Datasheet Search Results

The 20N03L is Ipd20n03l. Search results on our website will show parts matching your search part number. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. Thus, accurate confirmation is crucial to ensure proper functionality of the part in your specific application. At our website, we prioritize providing our users with the most accurate and up-to-date information available to make informed decisions about electronic components.

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No Part number Description ( Function ) Manufacturers PDF
1 20N03L

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for

Infineon Technologies
Infineon Technologies

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Recommended search results related to 20N03L

Part No Description ( Function) Manufacturers PDF
20N03HL   MTD20N03HL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanc

Motorola Semiconductors
Motorola Semiconductors
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B20N03   N-Channel Logic Level Enhancement Mode Field Effect Transistor

CHIPSET-IC.COM     N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  20mΩ  ID  12A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RA

Excelliance MOS
Excelliance MOS
datasheet pdf

BRD20N03 Rev.D May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features RDS(on)小,门电荷低,Crss 小,开关速度快。 Low RDS(on),low gate charge, low Crss, fast spee

datasheet pdf

BRI20N03 Rev.D Nov.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features RDS(on)小,门电荷低,Crss 小,开关速度快。 Low RDS(on),low gate charge, low Crss, fast spee

datasheet pdf
BSC020N03LSG   Power-Transistor

OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R

Infineon Technologies
Infineon Technologies
datasheet pdf


List of most widely used semiconductors

Part Number Function Manufacturers PDF

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  

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