20N03L PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 20N03L | IPD20N03L IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for |
 Infineon Technologies |
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20N0 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 20N03HL | MTD20N03HL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanc |
 Motorola Semiconductors |
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| 20N06 | NTD20N06 NTD20N06 Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • • • • • • • • Pb−F |
 ETC |
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| 20N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching |
 Inchange Semiconductor |
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