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Datasheet 1SS369 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 1SS369 | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS369
Low Voltage High Speed Switching
Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max)
1SS369
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage |
 Toshiba Semiconductor |
 |
| 1 | 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE 1SS369
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features • Low forward voltage • Low reverse current
Applications • High Speed Switching
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
SU
Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) |
 SEMTECH |
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