No | Part number | Description ( Function ) | Manufacturers | |
112 | 1N65 | (1N6x) GOLD BONDED DIODES |
BC |
|
111 | 1N65 | Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
|
110 | 1N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching application |
Unisonic Technologies |
|
109 | 1N65 | Diode ( Rectifier ) |
American Microsemiconductor |
|
108 | 1N6506 | MONOLITHIC AIR ISOLATED DIODE ARRAY 1N6506 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V C < 4.0 pF 10 2 3 4 5 6 7 8 Absolute Maximum Ratings: Symbol VBR(R)*1 *2 IO *1 * 3 IFSM *1 PT1 *4 PT2 *4 Top Tst |
Microsemi Corporation |
|
107 | 1N6506 | Diode ( Rectifier ) |
American Microsemiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |