pdf datasheet site - dataSheet39.com


1N5822 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
40 1N5822
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER

DC COMPONENTS CO., LTD. R 6O:=75 TIRU 6O:=77 RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 835 Beh^i^j GFBTURFS / / / / / / Mgn jnbkabf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a lii^fk ZhZ[bdbkp Ib`a jnbkabf` ZhZ[bkbkp Ib`a jli`^ ZhZ[bdbkp Ib`a i^dbZ[bdbkp EP27< NFDIBOJDBM EBTB / / / / / / DZj^? Ngd]^] hdZ

Dc Components
Dc Components
pdf
39 1N5822
SCHOTTKY RECTIFIERS

1N5820-1N5822 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Storage t

Digitron Semiconductors
Digitron Semiconductors
pdf
38 1N5822
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20/ 30/ 40 VOLTS

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in l

MotorolaInc
MotorolaInc
pdf
37 1N5822
Schottky Barrier Rectifiers

1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom Ø 4.5 ±0.1 3A 20…40 V ~ DO-201 1g Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. ±0.5 62.5 Type 7.5 ±0.1 Ø 1.2 ±0.05 Plastic material has UL classification 94V-0 Gehäusem

Diotec Semiconductor
Diotec Semiconductor
pdf
36 1N5822
Schottky Barrier Rectifiers

CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N5820 - 1N5822 Taiwan Semiconductor FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-201AD Molding compound, UL flamm

Taiwan Semiconductor
Taiwan Semiconductor
pdf
35 1N5822
SCHOTTKY BARRIER RECTIFIER DIODES

1N5820 - 1N5822 PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic *

EIC discrete Semiconductors
EIC discrete Semiconductors
pdf



Share Link

[1] [2] [3] [4] [5] [6] [7] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  1N5


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us