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1N5818 PDF Datasheet

The 1N5818 is Schottky Rectifiers, Schottky Barrier Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
41 1N5818
1A, 30V, Schottky Barrier Diode

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS �

NXP Semiconductors
NXP Semiconductors
pdf
40 1N5818
30V, 1A, LOW DROP POWER SCHOTTKY RECTIFIER

® 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS n n n n n 1A 40 V 150°C 0.45 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DO41 DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplie

STMicroelectronics
STMicroelectronics
pdf
39 1N5818
1A, 30V, SCHOTTKY BARRIER RECTIFIER

Fuji Electric
Fuji Electric
pdf
38 1N5818
30V, 1A, SCHOTTKY BARRIER RECTIFIER

Won-Top Electronics
Won-Top Electronics
pdf
37 1N5818
1A, 30V, Schottky Barrier Rectifier

1N5817-1N5819 Discrete POWER & Signal Technologies 1N5817 - 1N5819 Features • • 1.0 ampere operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. 1.0 min (25.4) Dimensions in inches (mm) 0.205 (5.21) 0.160 (4.06) DO-41 COLOR BAND DENOTES CATHODE 0.107 (2.72) 0.080 (2.03) 0.0

Fairchild Semiconductor
Fairchild Semiconductor
pdf
36 1N5818
SCHOTTKY BARRIER RECTIFIER, 30V, 1A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltag

MotorolaInc
MotorolaInc
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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