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Datasheet 18N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
18 | 18N10 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr |
Inchange Semiconductor |
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17 | 18N120BN | HGTG18N120BN HGTG18N120BN
Data Sheet December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the hi |
Fairchild Semiconductor |
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16 | 18N20 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.092Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, rela |
Inchange Semiconductor |
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15 | 18N20GH | AP18N20GH Advanced Power Electronics Corp.
AP18N20GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free
D G
Description
S
AP18N20 series are from Advanced Power innovate |
Advanced Power Electronics |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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