185T2B PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 185T2B | TRANSISTOR Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 500.0 V 250.0 V 10.0 V 6.0 A 3.0 A 87.5 W 2.0 °C/W 200.0 °C empty empty NO. |
 DSI |
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185T Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 185T2C | TRANSISTOR Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Te |
DSI |
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| 185T2 | NPN SILICON TRANSISTORS BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter V |
 Comset Semiconductor |
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| 185T2B | TRANSISTOR Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Te |
DSI |
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