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Datasheet 16N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 16N03L | RFD16N03L S E M I C O N D U C T O R
RFD16N03L, RFD16N03LSM
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE DRAIN (FLANGE)
December 1995
Features
• 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be |
 Fairchild Semiconductor |
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| 15 | 16N05 | RFD16N05 RFD16N05, RFD16N05SM
Data Sheet November 2003
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization o |
Fairchild Semiconductor |
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| 14 | 16N15 | FQP16N15
QFET
% % % % % % % &' ()&*+,-.+ &'Ω/,.&+, 0 1 23
4 01 3+4
&++5 !
6
!!$ " &7*°
8
9
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Fairchild Semiconductor |
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| 13 | 16N25 | FQP16N25 FQP16N25 — N-Channel QFET® MOSFET
FQP16N25
N-Channel QFET® MOSFET
250 V, 16 A, 230 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailor |
Fairchild Semiconductor |
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