Datasheet 15N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	15N03GH	AP15N03GH AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindustr	Advanced Power Electronics	data
2	15N03H	AP15N03H AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial	Advanced Power Electronics	data
3	15N03K	AP15N03K AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all c	Advanced Power Electronics	data
4	15N03L	IPP15N03L IPP15N03L IPB15N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistanc	Infineon Technologies AG	data
5	15N05	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N05 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching	Inchange Semiconductor	mosfet

15N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	15N03GH	AP15N03GH AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindustr	Advanced Power Electronics	data
2	15N03H	AP15N03H AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial	Advanced Power Electronics	data
3	15N03K	AP15N03K AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all c	Advanced Power Electronics	data
4	15N03L	IPP15N03L IPP15N03L IPB15N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistanc	Infineon Technologies AG	data
5	15N05	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N05 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching	Inchange Semiconductor	mosfet
6	15N06	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N06 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching	Inchange Semiconductor	mosfet
7	15N06	60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 15N06 15A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 1 Power MOSFET TO-220 The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM	Unisonic Technologies	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
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