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Datasheet 13NM60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 13NM60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
13NM60
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche charac |  Unisonic Technologies | mosfet |
| 2 | 13NM60N | STL13NM60N STL13NM60N
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET
Features
Order code STL13NM60N VDSS @ TJmax 650 V RDS(on) max < 0.385 Ω ID 10 A (1)
' $ 3 3 3
"OTTOM VIEW
1. The value is rated according to Rthj-case ■ ■ ■
100% avalanche tested Low in |  STMicroelectronics | data |
13N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 13N03LA | IPD13N03LA
IPD13N03LA IPU13N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)  Infineon Technologies data | | |
| 2 | 13N06L | FQB13N06L FQB13N06L / FQI13N06L
May 2001
QFET
FQB13N06L / FQI13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor  Fairchild Semiconductor data | | |
| 3 | 13N10 | FQB13N10 FQB13N10 / FQI13N10
January 2001
QFET
FQB13N10 / FQI13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to Fairchild Semiconductor data | | |
| 4 | 13N40 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
13N40
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.35Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·  Inchange Semiconductor mosfet | | |
| 5 | 13N40 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
13N40
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-st Unisonic Technologies mosfet | | |
| 6 | 13N40K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
13N40K-MT
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in a Unisonic Technologies mosfet | | |
| 7 | 13N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 13N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
1
TO-220
The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching Unisonic Technologies mosfet | |
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