SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plusâ„¢ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet − production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge â€

STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram Order codes STF13N60M2(045Y) VDS @ TJmax 650 V RDS(on) max 0.38 Ω ID 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 1

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. H KF13N60N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B K FEATURES VDSS(Min.)= 600V, ID= 13A Drain-Source O