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Datasheet 13N50C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 13N50C | FQB13N50C
FQB13N50C/FQI13N50C
QFET
FQB13N50C/FQI13N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail | Fairchild Semiconductor | data |
2 | 13N50CF | FQPF13N50CF FQPF13N50CF — N-Channel QFET® FRFET® MOSFET
June 2014
FQPF13N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 13 A, 540 mΩ
Features
• 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
• Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Rec | Fairchild Semiconductor | data |
13N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 13N03LA | IPD13N03LA
IPD13N03LA IPU13N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Infineon Technologies data | | |
2 | 13N06L | FQB13N06L FQB13N06L / FQI13N06L
May 2001
QFET
FQB13N06L / FQI13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor Fairchild Semiconductor data | | |
3 | 13N10 | FQB13N10 FQB13N10 / FQI13N10
January 2001
QFET
FQB13N10 / FQI13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to Fairchild Semiconductor data | | |
4 | 13N40 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
13N40
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.35Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
5 | 13N40 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
13N40
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-st Unisonic Technologies mosfet | | |
6 | 13N40K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
13N40K-MT
Preliminary
13A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in a Unisonic Technologies mosfet | | |
7 | 13N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 13N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
1
TO-220
The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching Unisonic Technologies mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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