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13N50 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
5 13N50
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutati

Unisonic Technologies
Unisonic Technologies
pdf
4 13N50C
FQB13N50C

FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

Fairchild Semiconductor
Fairchild Semiconductor
pdf
3 13N50CF
FQPF13N50CF

FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode powe

Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 13N50H
N-CHANNEL MOSFET

KIA SEMICONDUCTORS 13Amps,500V N-CHANNEL MOSFET 13N50H 1.Description The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology 2. Features „ RDS(on)=0.48

KIA
KIA
pdf
1 13N50K
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N50K Preliminary 13A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and co

Unisonic Technologies
Unisonic Technologies
pdf


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