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Datasheet 13N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
25 | 13N03LA | IPD13N03LA
IPD13N03LA IPU13N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) |
Infineon Technologies |
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24 | 13N06L | FQB13N06L FQB13N06L / FQI13N06L
May 2001
QFET
FQB13N06L / FQI13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor |
Fairchild Semiconductor |
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23 | 13N10 | FQB13N10 FQB13N10 / FQI13N10
January 2001
QFET
FQB13N10 / FQI13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Fairchild Semiconductor |
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22 | 13N40 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
13N40
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.35Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
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Inchange Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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