13007B PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 13007B | TS13007B TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13007BCZ C0 Package TO-220 Packing 50p |
 TSC |
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1300 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 13003ADG | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 |
 Unisonic Technologies |
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| 13003BR | MJE13003BR MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown |
 ETC |
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| 13003CDH | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 |
Unisonic Technologies |
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