No | Part number | Description ( Function ) | Manufacturers | |
1 | 12P10 | 100V P-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12P10 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC mo |
Unisonic Technologies |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 12P10 |
Part No | Description ( Function) | Manufacturers | |
BYT12P1000 | Fast Recovery Silicon Power Rectifier BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak volt |
Vishay Telefunken |
|
BYT12P1000A | Fast Recovery Silicon Power Rectifier BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak volt |
Vishay Telefunken |
|
CEB12P10 | P-Channel Enhancement Mode Field Effect Transistor CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D |
CET |
|
CED12P10 | P-Channel Enhancement Mode Field Effect Transistor CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D |
CET |
|
CEP12P10 | P-Channel Enhancement Mode Field Effect Transistor CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D |
CET |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |