No | Part number | Description ( Function ) | Manufacturers | |
11 | 12N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit |
nELL |
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10 | 12N60 | N-CHANNEL MOSFET 12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source |
CHONGQING PINGYANG |
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9 | 12N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supp |
Inchange Semiconductor |
|
8 | 12N60 | 600/650 Volts N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET Power MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-sta |
Unisonic Technologies |
|
7 | 12N60A | N-Channel Power MOSFET / Transistor SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit |
nELL |
|
6 | 12N60AF | N-Channel Power MOSFET / Transistor SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swit |
nELL |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |