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Datasheet 12N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
51 12N035   N-Channel Field Effect Transistor

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 12N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b
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datasheet 12N035 pdf
50 12N06Z   12A 60V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g
UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
datasheet 12N06Z pdf
49 12N10   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le
Unisonic Technologies
Unisonic Technologies
datasheet 12N10 pdf
48 12N10P   N-CHANNEL MOSFET

12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA �
CHONGQING PINGYANG
CHONGQING PINGYANG
datasheet 12N10P pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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