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Datasheet 11N90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 11N90 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
11N90
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.1Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·A |
 Inchange Semiconductor |
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| 2 | 11N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N90
Preliminary Power MOSFET
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
1 TO-220
The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology s |
 Unisonic Technologies |
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| 1 | 11N90C | FQA11N90C FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability |
 Fairchild Semiconductor |
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