No | Part number | Description ( Function ) | Manufacturers | |
2 | 11N80 | 11A 812V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary Power MOSFET 11A, 812V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-3P The UTC 11N80 is an N-C hannel power MOSFET, it uses UTC’s advanced technology to pr ovide customers with a mi nimum on-state resistance, low gate charge and high switching speed. The UTC 11N8 0 is su itable for high speed switching applications in po wer s |
UNISONIC TECHNOLOGIES |
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1 | 11N80C3 | SPP11N80C3 SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11 V Ω A PG-TO220-3-31 PG-TO220 • PG-TO-220-3-31: Fully isolated package (250 |
Infineon |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |