pdf datasheet site - dataSheet39.com

11N60S5 PDF Datasheet

The 11N60S5 is Spp11n60s5. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 11N60S5
SPP11N60S5

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 2 1 P-TO220-3-1 23 Ty

Infineon Technologies AG
Infineon Technologies AG
pdf

0    1    2    3    4    5    6    7    8   9  

  A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q    R    S   

 T    U    V    W    X    Y    Z    ALL


Recommended search results related to 11N60S5

Part No Description ( Function) Manufacturers PDF
SPB11N60S5   Cool MOS Power Transistor

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS

Infineon Technologies
Infineon Technologies
datasheet pdf
SPI11N60S5   Cool MOS Power Transistor

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS

Infineon Technologies
Infineon Technologies
datasheet pdf
SPP11N60S5   Cool MOS Power Transistor

e e Cool MOS™h Power Transistor S Feature ta a • New revolutionary high voltage technology D . • Ultra low gate charge w wPeriodic avalanche rated • w• Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance U 4 t m o .c SPP11N60S5, SPB

Infineon Technologies
Infineon Technologies
datasheet pdf
SPW11N60S5   Cool MOS Power Transistor

SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.38 11 P-TO247 V

Infineon Technologies
Infineon Technologies
datasheet pdf
11N60C3   SPP11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V

Infineon Technologies
Infineon Technologies
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    11N



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us