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11N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 11N60C3
SPP11N60C3

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A • PG-TO-220-3-31: F

Infineon Technologies
Infineon Technologies
pdf
2 11N60K-MT
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 11N60K-MT Preliminary 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mod

Unisonic Technologies
Unisonic Technologies
pdf
1 11N60S5
SPP11N60S5

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 2 1 P-TO220-3-1 23 Ty

Infineon Technologies AG
Infineon Technologies AG
pdf


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