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10N60Z-Q PDF Datasheet

The 10N60Z-Q is N-channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 10N60Z-Q
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s

Unisonic Technologies
Unisonic Technologies
pdf

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Recommended search results related to 10N60Z-Q

Part No Description ( Function) Manufacturers PDF
10N60   N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating o

nELL
nELL
datasheet pdf
10N60   N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 10N60 ·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Swit

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf
10N60   600/650 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate char

Unisonic Technologies
Unisonic Technologies
datasheet pdf
10N60   N-CHANNEL MOSFET

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute

CHONGQING PINGYANG
CHONGQING PINGYANG
datasheet pdf
10N60A   SSP10N60A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDS

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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