No | Part number | Description ( Function ) | Manufacturers | |
1 | 10N60Z-Q | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s |
Unisonic Technologies |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 10N60Z-Q |
Part No | Description ( Function) | Manufacturers | |
10N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating o |
nELL |
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10N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 10N60 ·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Swit |
Inchange Semiconductor |
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10N60 | 600/650 Volts N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate char |
Unisonic Technologies |
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10N60 | N-CHANNEL MOSFET 10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE 10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute |
CHONGQING PINGYANG |
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10N60A | SSP10N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDS |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |