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10N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
15 10N60
N-Channel Power MOSFET

SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swi

nELL
nELL
pdf
14 10N60
N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 10N60 ·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power sup

Inchange Semiconductor
Inchange Semiconductor
pdf
13 10N60
N-CHANNEL MOSFET

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Sourc

CHONGQING PINGYANG
CHONGQING PINGYANG
pdf
12 10N60
600/650 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is u

Unisonic Technologies
Unisonic Technologies
pdf
11 10N60A
SSP10N60A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati

Fairchild Semiconductor
Fairchild Semiconductor
pdf
10 10N60B
SSH10N60B

SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

Fairchild Semiconductor
Fairchild Semiconductor
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