IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal

Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS  DESCRIPTION The UTC 10N15 is an N-channel enhancement mode silicon-gate power field effect transistors, it uses UTC’s advanced technology to provide the customers with high breakdown voltage etc. The UTC 10N15 is suitable for switching converters, switching regulators, relay dri

 
 

 
 
  
  
                        
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FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,

UNISONIC TECHNOLOGIES CO., LTD 10N30 Preliminary Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can with