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09N20 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 09N20
GI09N20

Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile application

GTM
GTM
pdf

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09N Data sheets

Part No Description ( Function) Manufacturers PDF
09N03LA   IPB09N03LA

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal res

Infineon Technologies
Infineon Technologies
datasheet pdf
09N03   PJD09N03

Datasheet39.com PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for

Pan Jit International
Pan Jit International
datasheet pdf
09N90E   FMH09N90E

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche

Fuji Electric
Fuji Electric
datasheet pdf


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