09N20 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 09N20 | GI09N20 Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile application |
 GTM |
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09N Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 09N03 | PJD09N03 Datasheet39.com PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for |
 Pan Jit International |
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| 09N05 | SPD09N05 SPD 09N05 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated • dv/dt • 175 |
 Infineon |
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| 09N90E | FMH09N90E FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche |
 Fuji Electric |
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