No | Part number | Description ( Function ) | Manufacturers | |
1 | 09N20 | GI09N20 Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE : GI09N20 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile application |
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Recommended search results related to 09N20 |
Part No | Description ( Function) | Manufacturers | |
AP09N20BGH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP09N20BGH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A Descri |
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AP09N20BGI-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP09N20BGI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A S Descri |
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AP09N20BGP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP09N20BGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A Descri |
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AP09N20BGS-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP09N20BGS-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A S Descri |
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AP09N20H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP09N20H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 380mΩ 8.6A Description S G D The Advanced Power MOSFETs from APEC provide t |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
![]() Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
![]() ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |