|
|
Datasheet 09N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 09N03 | PJD09N03 www.DataSheet.co.kr
PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and |
 Pan Jit International |
 |
| 7 | 09N03LA | IPB09N03LA
IPB09N03LA IPI09N03LA, IPP09N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C |
 Infineon Technologies |
|
| 6 | 09N05 | SPD09N05 SPD 09N05
SIPMOS® Power Transistor
Features • N channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
55 0.1 9.2
V Ω A
Enhancement mode rated
• Avalanche rated
• dv/dt
• 175˚C operating temper |
 Infineon |
|
| 5 | 09N20 | GI09N20 Pb Free Plating Product
ISSUED DATE :2005/06/27 REVISED DATE :
GI09N20
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 380m 8.6A
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effective |
 GTM |
|
| Esta página es del resultado de búsqueda del 09N. Si pulsa el resultado de búsqueda de 09N se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |